![]() | 姓名:郭程 职称:青年研究员 联系方式:见黄页 电子邮件:guocheng@dhu.edu.cn 研究方向:二维/拓扑材料,红外光电探测,太赫兹探测器件 个人简介: 2020年在中科院上海技术物理研究所获得微电子学与固体电子学博士学位。主要研究方向为红外太赫兹光电探测,近年来,将光电探测与新型纳米材料(二维材料及拓扑材料)相结合,开展相关的理论和实践研究。在Science Advances、Nano Letters、Advanced Functional Materials等国际权威学术期刊上发表相关论文20篇。授权发明专利2项。主持国家自然科学基金1项和中国博士后面上项目1项。 学习和工作经历
科研成果在Science Advances、Nano Letters、Advanced Functional Materials、Nano Energy、Advanced Science、Small、Optics Letters等期刊上参与发表(包括第一作者/通讯作者)SCI论文20篇。论文入选2020年度中国半导体十大研究进展候选。主持国家自然科学基金1项和中国博士后面上项目1项。 科研论文1) Shuguang Guo, Yuan He, XuyangLv, Mengjie Jiang, Yingdong Wei, Yu Deng, Xiaokai Pan, Shiqi Lan, Dong Wang, Aiyun Liu*, Cheng Guo*, Lin Wang*.Topological insulator MnBi2Te4 and its van der Waals heterostructure for sensitive room-temperature terahertz photodetection. 2D Materials, 11 (3), 035008 (2024). 2) Cheng Guo, et al. Ultrasensitive anisotropic room-temperature terahertz photodetector based on an intrinsic magnetic topological insulator MnBi2Te4. Nano Letters, 22 (18), 7492-7498 (2022) 3) Cheng Guo, et al. Ultrafast visible-infrared photodetector based on SnSe2/Bi2Se3 heterostructure. Optics Letters, 47 (19), 4977-4980 (2022). 4) Cheng Guo, et al. Anisotropic Ultrasensitive PdTe2-based Phototransistor for Room-Temperature Long-wavelength Detection. Science Advances, 6 (36), eabb6500 (2020). 5) Cheng Guo, et al. Ultrasensitive Ambient-Stable SnSe2-based Broadband Photodetectors for Room-Temperature IR/THz Energy conversion and Imaging. 2d Materials, 7 (3), 035026 (2020). 6) G D'Olimpio, Cheng Guo (Co-first author), et al. PdTe2 Transition-Metal Dichalcogenide: Chemical Reactivity, Thermal Stability, and Device Implementation. Advanced Functional Materials, 30 (5), 1906556 (2020) . 7) Yijun Xu, Changlong Liu, Cheng Guo (Co-first author), et al. High performance near infrared photodetector based on in-plane black phosphorus p-n homojunction. Nano Energy, 70, 104518 (2020) . 8) Weiwei Tang, Antonio Politano, Cheng Guo (Co-first author), et al. Ultrasensitive Room-Temperature Terahertz Direct Detection Based on a Bismuth Selenide Topological Insulator. Advanced Functional Materials , 28 (31), 1801786 (2018) .
专利情况1) 王林,郭万龙,郭程,陈效双,陆卫。一种室温黑磷太赫兹探测器及其制备方法,CN110400855B。 2) 王林,郭万龙,郭程,陈效双,陆卫。一种可调控的室温石墨烯太赫兹探测器及其制备方法,CN110416349B。 |